Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances
نویسندگان
چکیده
We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on graphene channel field-effect transistors (GC-FET). These comprise gate barrier layer (BL) composed lateral hexagonal-boron nitride black-phosphorus/hexagonal-boron (h-BN/b-P/h-BN) structure. The main part GC is encapsulated in h-BN, whereas a short section sandwiched between b-P BL h-BN bottom layer. serves as window for electron thermionic current from GC. mobility can be fairly large. This might enable strong resonant plasmonic response GC-FET despite relatively lower covered by BL. narrow diminishes Peltier cooling enhances detector performance. proposed device structure its operation principle promote elevated-temperature THz responsivity values other characteristics, especially at resonances.
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2023
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0160899